Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation

Research output: Contribution to journal › Article › Research › peer-review

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Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation. / Schaffar, Gerald J.K.; Tscharnuter, Daniel; Imrich, Peter Julian et al.
In: Thin solid films, Vol. 809.2025, No. 1 January, 140597, 27.12.2024.

Research output: Contribution to journal › Article › Research › peer-review

Harvard

Schaffar, GJK, Tscharnuter, D, Imrich, PJ & Maier-Kiener, V 2024, 'Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation', Thin solid films, vol. 809.2025, no. 1 January, 140597. https://doi.org/10.1016/j.tsf.2024.140597

APA

Schaffar, G. J. K., Tscharnuter, D., Imrich, P. J., & Maier-Kiener, V. (2024). Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation. Thin solid films, 809.2025(1 January), Article 140597. https://doi.org/10.1016/j.tsf.2024.140597

Vancouver

Schaffar GJK, Tscharnuter D, Imrich PJ, Maier-Kiener V. Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation. Thin solid films. 2024 Dec 27;809.2025(1 January):140597. doi: 10.1016/j.tsf.2024.140597

Author

Schaffar, Gerald J.K. ; Tscharnuter, Daniel ; Imrich, Peter Julian et al. / Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation. In: Thin solid films. 2024 ; Vol. 809.2025, No. 1 January.

Bibtex - Download

@article{4358b8e6fa594400b7c1ebfed351e0c9,
title = "Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation",
abstract = "This work aims to apply modern spherical indentation methods to micromechanical testing at exceptionally high temperatures. Tests were performed on a polycrystalline silicon thin film. This film was deposited on a (100) monocrystalline silicon substrate with an intermediate Oxide layer, mimicking the structure of a silicon-gate technology field effect transistor. The indentation tests were conducted at 500 °C and 700 °C. The obtained flow curves are discussed regarding the microscopically observed deformation behavior and compared to literature data concerning the high-temperature plasticity of silicon. The results suggest kink-pair controlled, thermally activated glide of dislocations as the dominating plastic deformation mechanism for both investigated temperatures.",
keywords = "High-temperature, Plasticity, Silicon, Spherical nanoindentation, Thin films",
author = "Schaffar, {Gerald J.K.} and Daniel Tscharnuter and Imrich, {Peter Julian} and Verena Maier-Kiener",
note = "Publisher Copyright: {\textcopyright} 2024 The Author(s)",
year = "2024",
month = dec,
day = "27",
doi = "10.1016/j.tsf.2024.140597",
language = "English",
volume = "809.2025",
journal = "Thin solid films",
issn = "0040-6090",
publisher = "Elsevier B.V.",
number = "1 January",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Extracting high-temperature stress–strain curves from a 1.2 μm silicon film using spherical nanoindentation

AU - Schaffar, Gerald J.K.

AU - Tscharnuter, Daniel

AU - Imrich, Peter Julian

AU - Maier-Kiener, Verena

N1 - Publisher Copyright: © 2024 The Author(s)

PY - 2024/12/27

Y1 - 2024/12/27

N2 - This work aims to apply modern spherical indentation methods to micromechanical testing at exceptionally high temperatures. Tests were performed on a polycrystalline silicon thin film. This film was deposited on a (100) monocrystalline silicon substrate with an intermediate Oxide layer, mimicking the structure of a silicon-gate technology field effect transistor. The indentation tests were conducted at 500 °C and 700 °C. The obtained flow curves are discussed regarding the microscopically observed deformation behavior and compared to literature data concerning the high-temperature plasticity of silicon. The results suggest kink-pair controlled, thermally activated glide of dislocations as the dominating plastic deformation mechanism for both investigated temperatures.

AB - This work aims to apply modern spherical indentation methods to micromechanical testing at exceptionally high temperatures. Tests were performed on a polycrystalline silicon thin film. This film was deposited on a (100) monocrystalline silicon substrate with an intermediate Oxide layer, mimicking the structure of a silicon-gate technology field effect transistor. The indentation tests were conducted at 500 °C and 700 °C. The obtained flow curves are discussed regarding the microscopically observed deformation behavior and compared to literature data concerning the high-temperature plasticity of silicon. The results suggest kink-pair controlled, thermally activated glide of dislocations as the dominating plastic deformation mechanism for both investigated temperatures.

KW - High-temperature

KW - Plasticity

KW - Silicon

KW - Spherical nanoindentation

KW - Thin films

UR - http://www.scopus.com/inward/record.url?scp=85213501582&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2024.140597

DO - 10.1016/j.tsf.2024.140597

M3 - Article

VL - 809.2025

JO - Thin solid films

JF - Thin solid films

SN - 0040-6090

IS - 1 January

M1 - 140597

ER -

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