Delayed failure behaviour of the ESIS silicon nitride reference material at 1200 °C in air
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in: Materials letters, Jahrgang 58, Nr. 6, 01.02.2004, S. 871-875.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
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TY - JOUR
T1 - Delayed failure behaviour of the ESIS silicon nitride reference material at 1200 °C in air
AU - Kovalcík, J.
AU - Dusza, J.
AU - Lube, T.
AU - Danzer, R.
PY - 2004/2/1
Y1 - 2004/2/1
KW - Delayed failure
KW - Silicon nitride
KW - Slow crack growth creep
KW - Time to failure
UR - http://www.scopus.com/inward/record.url?scp=0346341012&partnerID=8YFLogxK
U2 - 10.1016/j.matlet.2003.08.002
DO - 10.1016/j.matlet.2003.08.002
M3 - Article
AN - SCOPUS:0346341012
VL - 58
SP - 871
EP - 875
JO - Materials letters
JF - Materials letters
SN - 0167-577X
IS - 6
ER -