Delayed failure behaviour of the ESIS silicon nitride reference material at 1200 °C in air

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Delayed failure behaviour of the ESIS silicon nitride reference material at 1200 °C in air. / Kovalcík, J.; Dusza, J.; Lube, T. et al.
In: Materials letters, Vol. 58, No. 6, 01.02.2004, p. 871-875.

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Kovalcík J, Dusza J, Lube T, Danzer R. Delayed failure behaviour of the ESIS silicon nitride reference material at 1200 °C in air. Materials letters. 2004 Feb 1;58(6):871-875. doi: 10.1016/j.matlet.2003.08.002

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@article{ea035337dd8f4b2dbe17de38529f44c2,
title = "Delayed failure behaviour of the ESIS silicon nitride reference material at 1200 °C in air",
keywords = "Delayed failure, Silicon nitride, Slow crack growth creep, Time to failure",
author = "J. Kovalc{\'i}k and J. Dusza and T. Lube and R. Danzer",
year = "2004",
month = feb,
day = "1",
doi = "10.1016/j.matlet.2003.08.002",
language = "English",
volume = "58",
pages = "871--875",
journal = "Materials letters",
issn = "0167-577X",
publisher = "Elsevier",
number = "6",

}

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TY - JOUR

T1 - Delayed failure behaviour of the ESIS silicon nitride reference material at 1200 °C in air

AU - Kovalcík, J.

AU - Dusza, J.

AU - Lube, T.

AU - Danzer, R.

PY - 2004/2/1

Y1 - 2004/2/1

KW - Delayed failure

KW - Silicon nitride

KW - Slow crack growth creep

KW - Time to failure

UR - http://www.scopus.com/inward/record.url?scp=0346341012&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2003.08.002

DO - 10.1016/j.matlet.2003.08.002

M3 - Article

AN - SCOPUS:0346341012

VL - 58

SP - 871

EP - 875

JO - Materials letters

JF - Materials letters

SN - 0167-577X

IS - 6

ER -