Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Standard
Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy. / Brauer, G.; Anwand, W.; Skorupa, W. et al.
in: Journal of applied physics, Jahrgang 99, 2006, S. 023523-1-023523-8.
in: Journal of applied physics, Jahrgang 99, 2006, S. 023523-1-023523-8.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Harvard
Brauer, G, Anwand, W, Skorupa, W, Brandstetter, S & Teichert, C 2006, 'Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy', Journal of applied physics, Jg. 99, S. 023523-1-023523-8. https://doi.org/10.1063/1.2161940
APA
Brauer, G., Anwand, W., Skorupa, W., Brandstetter, S., & Teichert, C. (2006). Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy. Journal of applied physics, 99, 023523-1-023523-8. https://doi.org/10.1063/1.2161940
Vancouver
Brauer G, Anwand W, Skorupa W, Brandstetter S, Teichert C. Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy. Journal of applied physics. 2006;99:023523-1-023523-8. doi: 10.1063/1.2161940
Author
Bibtex - Download
@article{4614329830f84b63bca4b35301248357,
title = "Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy",
author = "G. Brauer and W. Anwand and W. Skorupa and S. Brandstetter and Christian Teichert",
year = "2006",
doi = "10.1063/1.2161940",
language = "English",
volume = "99",
pages = "023523--1--023523--8",
journal = "Journal of applied physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Characterization of 6H-SiC surfaces after ion implantation and annealing using positron annihilation spectroscopy and atomic force microscopy
AU - Brauer, G.
AU - Anwand, W.
AU - Skorupa, W.
AU - Brandstetter, S.
AU - Teichert, Christian
PY - 2006
Y1 - 2006
U2 - 10.1063/1.2161940
DO - 10.1063/1.2161940
M3 - Article
VL - 99
SP - 023523-1-023523-8
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
ER -
