Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials
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In: npj 2D materials and applications, Vol. 2022, No. 1, 76, 31.10.2022.
Research output: Contribution to journal › Article › Research › peer-review
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TY - JOUR
T1 - Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials
AU - Aslam, Muhammad Awais
AU - Tran, Tuan Hoang
AU - Supina, Antonio
AU - Siri, Olivier
AU - Meunier, Vincent
AU - Watanabe, Watanabe
AU - Taniguchi, Takashi
AU - Kralj, Marko
AU - Teichert, Christian
AU - Sheremet, Evgeniya
AU - Rodriguez, Raul D.
AU - Matkovic, Aleksandar
N1 - Publisher Copyright: © 2022, The Author(s).
PY - 2022/10/31
Y1 - 2022/10/31
N2 - The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials. Here, we propose a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, narrow size distribution, and straightforward device integrability. The wide applicability of this technique is demonstrated by fabricating molybednum disulphide, tungsten disulphide, tungsten diselenide, and graphene nanoribbon field effect transistors that inherently do not suffer from interconnection resistance. By relying on self-aligning organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon’s edges. Electrical characterization shows record mobilities and very high ON currents despite extreme width scaling. Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way for nanoribbon-based opto-electronic devices.
AB - The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials. Here, we propose a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, narrow size distribution, and straightforward device integrability. The wide applicability of this technique is demonstrated by fabricating molybednum disulphide, tungsten disulphide, tungsten diselenide, and graphene nanoribbon field effect transistors that inherently do not suffer from interconnection resistance. By relying on self-aligning organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon’s edges. Electrical characterization shows record mobilities and very high ON currents despite extreme width scaling. Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way for nanoribbon-based opto-electronic devices.
UR - http://www.scopus.com/inward/record.url?scp=85140967800&partnerID=8YFLogxK
U2 - 10.1038/s41699-022-00356-y
DO - 10.1038/s41699-022-00356-y
M3 - Article
VL - 2022
JO - npj 2D materials and applications
JF - npj 2D materials and applications
SN - 2397-7132
IS - 1
M1 - 76
ER -