Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x
Research output: Contribution to conference › Poster › Research › peer-review
Standard
Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x. / Teichert, Christian.
2009. Poster session presented at DPG Regensburg, Regensburg, Germany.
2009. Poster session presented at DPG Regensburg, Regensburg, Germany.
Research output: Contribution to conference › Poster › Research › peer-review
Harvard
Teichert, C 2009, 'Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x', DPG Regensburg, Regensburg, Germany, 4/03/09.
APA
Teichert, C. (2009). Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x. Poster session presented at DPG Regensburg, Regensburg, Germany.
Vancouver
Teichert C. Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x. 2009. Poster session presented at DPG Regensburg, Regensburg, Germany.
Author
Bibtex - Download
@conference{6f986afad3c64e5b854ea556b806d9c9,
title = "Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x",
author = "Christian Teichert",
year = "2009",
language = "English",
note = "DPG Regensburg ; Conference date: 04-03-2009",
}
RIS (suitable for import to EndNote) - Download
TY - CONF
T1 - Morphological properties of three dimensional Ge nanoclusters grown on SiOx (x
AU - Teichert, Christian
PY - 2009
Y1 - 2009
M3 - Poster
T2 - DPG Regensburg
Y2 - 4 March 2009
ER -
