Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

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Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors. / Montaigne Ramil, A.; Singh, Th. B.; Haber, N.T. et al.
In: Journal of crystal growth, Vol. 288, 2006, p. 123-127.

Research output: Contribution to journalArticleResearchpeer-review

Harvard

Montaigne Ramil, A, Singh, TB, Haber, NT, Marjanovic, NS, Grünes, S, Andreev, A, Matt, GJ, Resel, R, Sitter, H & Sariciftci, S 2006, 'Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors', Journal of crystal growth, vol. 288, pp. 123-127. https://doi.org/10.1016/j.jcrysgro.2005.12.061

APA

Montaigne Ramil, A., Singh, T. B., Haber, N. T., Marjanovic, N. S., Grünes, S., Andreev, A., Matt, G. J., Resel, R., Sitter, H., & Sariciftci, S. (2006). Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors. Journal of crystal growth, 288, 123-127. https://doi.org/10.1016/j.jcrysgro.2005.12.061

Vancouver

Montaigne Ramil A, Singh TB, Haber NT, Marjanovic NS, Grünes S, Andreev A et al. Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors. Journal of crystal growth. 2006;288:123-127. doi: 10.1016/j.jcrysgro.2005.12.061

Author

Montaigne Ramil, A. ; Singh, Th. B. ; Haber, N.T. et al. / Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors. In: Journal of crystal growth. 2006 ; Vol. 288. pp. 123-127.

Bibtex - Download

@article{ed421abfdc0d422e8818cffe8da6e5d7,
title = "Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors",
author = "{Montaigne Ramil}, A. and Singh, {Th. B.} and N.T. Haber and N.S. Marjanovic and S. Gr{\"u}nes and Andrei Andreev and G.J. Matt and R. Resel and Helmut Sitter and S. Sariciftci",
year = "2006",
doi = "10.1016/j.jcrysgro.2005.12.061",
language = "English",
volume = "288",
pages = "123--127",
journal = "Journal of crystal growth",
issn = "0022-0248",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors

AU - Montaigne Ramil, A.

AU - Singh, Th. B.

AU - Haber, N.T.

AU - Marjanovic, N.S.

AU - Grünes, S.

AU - Andreev, Andrei

AU - Matt, G.J.

AU - Resel, R.

AU - Sitter, Helmut

AU - Sariciftci, S.

PY - 2006

Y1 - 2006

U2 - 10.1016/j.jcrysgro.2005.12.061

DO - 10.1016/j.jcrysgro.2005.12.061

M3 - Article

VL - 288

SP - 123

EP - 127

JO - Journal of crystal growth

JF - Journal of crystal growth

SN - 0022-0248

ER -