Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors
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In: Journal of crystal growth, Vol. 288, 2006, p. 123-127.
Research output: Contribution to journal › Article › Research › peer-review
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TY - JOUR
T1 - Influence of film growth conditions on carrier mobility of hot wall epitaxially grown fullerene based transistors
AU - Montaigne Ramil, A.
AU - Singh, Th. B.
AU - Haber, N.T.
AU - Marjanovic, N.S.
AU - Grünes, S.
AU - Andreev, Andrei
AU - Matt, G.J.
AU - Resel, R.
AU - Sitter, Helmut
AU - Sariciftci, S.
PY - 2006
Y1 - 2006
U2 - 10.1016/j.jcrysgro.2005.12.061
DO - 10.1016/j.jcrysgro.2005.12.061
M3 - Article
VL - 288
SP - 123
EP - 127
JO - Journal of crystal growth
JF - Journal of crystal growth
SN - 0022-0248
ER -