Fabrication of Amorphous Silicon-Carbon Hybrid Films using Single Source Precursors

Research output: Contribution to journalArticleResearchpeer-review

Authors

  • Aileen Sauermoser
  • Thomas Lainer
  • Michael Haas
  • Andreas Knoechl
  • Freskida Goni
  • Roland Fischer
  • Harald Fitzek
  • Martina Dienstleder
  • Christine Prietl
  • Anne Marie Kelterer
  • Georg Jakopic
  • Gerald Kothleitner
  • Michael Haas

External Organisational units

  • Zentrum f Elektronenmikroskopie Graz
  • Institute of Nanostructured Materials and Photonics, Joanneum Research
  • Technische Universität Graz

Abstract

The aim of this study was the preparation of different amorphous silicon–carbon hybrid thin-layer materials according to the liquid phase deposition (LPD) process using single-source precursors. In our study, 2-methyl-2-silyltrisilane (methylisotetrasilane; 2), 1,1,1-trimethyl-2,2-disilyltrisilane (trimethylsilylisotetrasilane; 3), 2-phenyl-2-silyltrisilane (phenylisotetrasilane; 4), and 1,1,2,2,4,4,5,5-octamethyl-3,3,6,6-tetrasilylcyclohexasilane (cyclohexasilane; 5) were utilized as precursor materials and compared with the parent compound 2,2-disilyltrisilane (neopentasilane; 1). Compounds 2–5 were successfully oligomerized at λ = 365 nm with catalytic amounts of the neopentasilane oligomer (NPO). These oligomeric mixtures (NPO and 6–9) were used for the preparation of thin-layer materials. Optimum solution and spin coating conditions were investigated, and amorphous silicon–carbon films were obtained. All thin-layer materials were characterized via UV/vis spectroscopy, light microscopy, spectroscopic ellipsometry, XPS, SEM, and SEM/EDX. Our results show that the carbon content and especially the bandgap can be easily tuned using these single-source precursors via LPD.

Details

Translated title of the contributionHErstellung amorpher Silicium-Kohlenstoff-Hybridschichten mit Precursoren aus einer Quelle
Original languageEnglish
Pages (from-to)15490-15501
Number of pages12
JournalInorganic chemistry
Volume62.2023
Issue number38
DOIs
Publication statusPublished - 12 Sept 2023