Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
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Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers. / Feltz, Adalbert; Gamsjäger, Ernst.
in: Journal of the European Ceramic Society, Jahrgang 18, 1998, S. 2217-2226.
in: Journal of the European Ceramic Society, Jahrgang 18, 1998, S. 2217-2226.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Harvard
Feltz, A & Gamsjäger, E 1998, 'Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers', Journal of the European Ceramic Society, Jg. 18, S. 2217-2226.
APA
Feltz, A., & Gamsjäger, E. (1998). Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers. Journal of the European Ceramic Society, 18, 2217-2226.
Vancouver
Feltz A, Gamsjäger E. Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers. Journal of the European Ceramic Society. 1998;18:2217-2226.
Author
Bibtex - Download
@article{85c4f374d0cc4b4db703b489c3c133ea,
title = "Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers",
author = "Adalbert Feltz and Ernst Gamsj{\"a}ger",
year = "1998",
language = "English",
volume = "18",
pages = "2217--2226",
journal = "Journal of the European Ceramic Society",
issn = "0955-2219",
publisher = "Elsevier",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - Semiconductor Properties of Thin and Thick Film Ga2O3 Ceramic Layers
AU - Feltz, Adalbert
AU - Gamsjäger, Ernst
PY - 1998
Y1 - 1998
M3 - Article
VL - 18
SP - 2217
EP - 2226
JO - Journal of the European Ceramic Society
JF - Journal of the European Ceramic Society
SN - 0955-2219
ER -
