Phasecoherent transport in PbTe Wide Parabolic Quantum Wells
Publikationen: Konferenzbeitrag › Poster › Forschung › (peer-reviewed)
Standard
Phasecoherent transport in PbTe Wide Parabolic Quantum Wells. / Oswald, Josef; Span, Gerhard; Homer, Alois et al.
1997. Postersitzung präsentiert bei 8th International Conference on Narrow Gap Semiconductors, Shanghai, China.
1997. Postersitzung präsentiert bei 8th International Conference on Narrow Gap Semiconductors, Shanghai, China.
Publikationen: Konferenzbeitrag › Poster › Forschung › (peer-reviewed)
Harvard
Oswald, J, Span, G, Homer, A, Heigl, G, Ganitzer, P, Maude, DK & Portal, JC 1997, 'Phasecoherent transport in PbTe Wide Parabolic Quantum Wells', 8th International Conference on Narrow Gap Semiconductors, Shanghai, China, 21/04/97 - 24/04/97.
APA
Oswald, J., Span, G., Homer, A., Heigl, G., Ganitzer, P., Maude, D. K., & Portal, J. C. (1997). Phasecoherent transport in PbTe Wide Parabolic Quantum Wells. Postersitzung präsentiert bei 8th International Conference on Narrow Gap Semiconductors, Shanghai, China.
Vancouver
Oswald J, Span G, Homer A, Heigl G, Ganitzer P, Maude DK et al.. Phasecoherent transport in PbTe Wide Parabolic Quantum Wells. 1997. Postersitzung präsentiert bei 8th International Conference on Narrow Gap Semiconductors, Shanghai, China.
Author
Bibtex - Download
@conference{c47d0b7aa384426c977613206025aa58,
title = "Phasecoherent transport in PbTe Wide Parabolic Quantum Wells",
author = "Josef Oswald and Gerhard Span and Alois Homer and Gernot Heigl and Paul Ganitzer and D.K. Maude and J.C. Portal",
year = "1997",
language = "English",
note = "8th Int. Conf. On Narrow Gap Semiconductors, Shanghai 1997 ; Conference date: 21-04-1997 Through 24-04-1997",
}
RIS (suitable for import to EndNote) - Download
TY - CONF
T1 - Phasecoherent transport in PbTe Wide Parabolic Quantum Wells
AU - Oswald, Josef
AU - Span, Gerhard
AU - Homer, Alois
AU - Heigl, Gernot
AU - Ganitzer, Paul
AU - Maude, D.K.
AU - Portal, J.C.
PY - 1997
Y1 - 1997
M3 - Poster
T2 - 8th Int. Conf. On Narrow Gap Semiconductors, Shanghai 1997
Y2 - 21 April 1997 through 24 April 1997
ER -
