Mechanical elastic constants of thin films determined by X-ray diffraction
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TY - BOOK
T1 - Mechanical elastic constants of thin films determined by X-ray diffraction
AU - Martinschitz, Klaus Juergen
N1 - no embargo
PY - 2008
Y1 - 2008
N2 - This thesis presents a new methodology to quantify mechanical elastic constants of polycrystalline thin films using X-ray diffraction under static conditions. The approach is based on the combination of X-ray diffraction substrate curvature and sin square psi methods. It is shown how to extrapolate the mechanical elastic constants from X-ray elastic constants considering crystal and macroscopic elastic anisotropy. A general formula is presented which can be used to determine a reflection hkl and its corresponding value of the X-ray anisotropic factor 3 Gamma hkl for which the X-ray elastic strain is equal to the mechanical strain. The method is applied to Cu/Si(100), CrN/Si(100) and TiN/Si(100) thin films deposited onto monocrystalline Si(400) substrates at room temperature. It is demonstrated that, for ber textured thin films, the 3 Gamma hkl value depends strongly on the fiber texture sharpness and the amount of randomly oriented crystallites. The advantage of the new technique remains in the fact that mechanical moduli are determined non-destructively and represent volume-averaged quantities.
AB - This thesis presents a new methodology to quantify mechanical elastic constants of polycrystalline thin films using X-ray diffraction under static conditions. The approach is based on the combination of X-ray diffraction substrate curvature and sin square psi methods. It is shown how to extrapolate the mechanical elastic constants from X-ray elastic constants considering crystal and macroscopic elastic anisotropy. A general formula is presented which can be used to determine a reflection hkl and its corresponding value of the X-ray anisotropic factor 3 Gamma hkl for which the X-ray elastic strain is equal to the mechanical strain. The method is applied to Cu/Si(100), CrN/Si(100) and TiN/Si(100) thin films deposited onto monocrystalline Si(400) substrates at room temperature. It is demonstrated that, for ber textured thin films, the 3 Gamma hkl value depends strongly on the fiber texture sharpness and the amount of randomly oriented crystallites. The advantage of the new technique remains in the fact that mechanical moduli are determined non-destructively and represent volume-averaged quantities.
KW - Röntgendiffraktion
KW - mechanische elastische Konstanten
KW - dünne Schichten
KW - Stoney Formel
KW - Substratbiegungsmethode
KW - Kornwechselwirkung
KW - Reuss Voigt Hill
KW - X-ray diffraction
KW - thin film
KW - mechanical elastic constants
KW - grain interaction
KW - Reuss Voigt Hill
M3 - Doctoral Thesis
ER -