Landau Level Lifetimes in PbTe wide parabolic quantum wells
Publikationen: Konferenzbeitrag › Poster › Forschung › (peer-reviewed)
Standard
Landau Level Lifetimes in PbTe wide parabolic quantum wells. / Langerak, CJGM; Oswald, Josef; Murdin, B.N. et al.
1997. Postersitzung präsentiert bei 8th International Conference on Narrow Gap Semiconductors, Shanghai, China.
1997. Postersitzung präsentiert bei 8th International Conference on Narrow Gap Semiconductors, Shanghai, China.
Publikationen: Konferenzbeitrag › Poster › Forschung › (peer-reviewed)
Harvard
Langerak, CJGM, Oswald, J, Murdin, BN, Kamal-Saadi, M, Bauer, G, Ciesla, CM & Pidgeon, CR 1997, 'Landau Level Lifetimes in PbTe wide parabolic quantum wells', 8th International Conference on Narrow Gap Semiconductors, Shanghai, China, 21/04/97 - 24/04/97.
APA
Langerak, CJGM., Oswald, J., Murdin, B. N., Kamal-Saadi, M., Bauer, G., Ciesla, C. M., & Pidgeon, C. R. (1997). Landau Level Lifetimes in PbTe wide parabolic quantum wells. Postersitzung präsentiert bei 8th International Conference on Narrow Gap Semiconductors, Shanghai, China.
Vancouver
Langerak CJGM, Oswald J, Murdin BN, Kamal-Saadi M, Bauer G, Ciesla CM et al.. Landau Level Lifetimes in PbTe wide parabolic quantum wells. 1997. Postersitzung präsentiert bei 8th International Conference on Narrow Gap Semiconductors, Shanghai, China.
Author
Bibtex - Download
@conference{686c365481f344b2afefe989b14b5dbe,
title = "Landau Level Lifetimes in PbTe wide parabolic quantum wells",
author = "CJGM Langerak and Josef Oswald and B.N. Murdin and M. Kamal-Saadi and G Bauer and C.M. Ciesla and C.R. Pidgeon",
year = "1997",
language = "English",
note = "8th Int. Conf. On Narrow Gap Semiconductors, Shanghai 1997 ; Conference date: 21-04-1997 Through 24-04-1997",
}
RIS (suitable for import to EndNote) - Download
TY - CONF
T1 - Landau Level Lifetimes in PbTe wide parabolic quantum wells
AU - Langerak, CJGM
AU - Oswald, Josef
AU - Murdin, B.N.
AU - Kamal-Saadi, M.
AU - Bauer, G
AU - Ciesla, C.M.
AU - Pidgeon, C.R.
PY - 1997
Y1 - 1997
M3 - Poster
T2 - 8th Int. Conf. On Narrow Gap Semiconductors, Shanghai 1997
Y2 - 21 April 1997 through 24 April 1997
ER -
