HfO2 as gate dielectrics for Ge-based devices
Publikationen: Buch/Bericht › Forschungsbericht › Transfer › (peer-reviewed)
Standard
HfO2 as gate dielectrics for Ge-based devices. / Spiga, S.; Wiemer, C.; Scarel, G. et al.
2007.
2007.
Publikationen: Buch/Bericht › Forschungsbericht › Transfer › (peer-reviewed)
Harvard
Spiga, S, Wiemer, C, Scarel, G, Tallarida, G, Seguini, G, Perego, M, Ferrari, S, Fanciulli, M, Mavrou, G, Dimoulas, A, Kremmer, S, Teichert, C & Pavia, G 2007, HfO2 as gate dielectrics for Ge-based devices. <http://www./mdm.infm.it>
APA
Spiga, S., Wiemer, C., Scarel, G., Tallarida, G., Seguini, G., Perego, M., Ferrari, S., Fanciulli, M., Mavrou, G., Dimoulas, A., Kremmer, S., Teichert, C., & Pavia, G. (2007). HfO2 as gate dielectrics for Ge-based devices. http://www./mdm.infm.it
Vancouver
Spiga S, Wiemer C, Scarel G, Tallarida G, Seguini G, Perego M et al. HfO2 as gate dielectrics for Ge-based devices. 2007.
Author
Bibtex - Download
@book{148355f3c52a4ffb928a8a0940786721,
title = "HfO2 as gate dielectrics for Ge-based devices",
author = "S. Spiga and C. Wiemer and G. Scarel and G. Tallarida and G. Seguini and M. Perego and S. Ferrari and M. Fanciulli and G. Mavrou and A. Dimoulas and Sascha Kremmer and Christian Teichert and G. Pavia",
year = "2007",
language = "English",
}
RIS (suitable for import to EndNote) - Download
TY - BOOK
T1 - HfO2 as gate dielectrics for Ge-based devices
AU - Spiga, S.
AU - Wiemer, C.
AU - Scarel, G.
AU - Tallarida, G.
AU - Seguini, G.
AU - Perego, M.
AU - Ferrari, S.
AU - Fanciulli, M.
AU - Mavrou, G.
AU - Dimoulas, A.
AU - Kremmer, Sascha
AU - Teichert, Christian
AU - Pavia, G.
PY - 2007
Y1 - 2007
M3 - Commissioned report
BT - HfO2 as gate dielectrics for Ge-based devices
ER -
