TY - JOUR

T1 - Epitaxy of highly ordered organic semiconductor crystallite networks supported by hexagonal boron nitride

AU - Matkovic, Aleksandar

AU - Genser, Jakob

AU - Lüftner, Daniel

AU - Kratzer, Markus

AU - Gajic, Rados

AU - Puschnig, Peter

AU - Teichert, Christian

PY - 2016/12/8

Y1 - 2016/12/8

N2 - This study focuses on hexagonal boron nitride as an ultra-thin van der Waals dielectric substrate for the epitaxial growth of highly ordered crystalline networks of the organic semiconductor parahexaphenyl. Atomic force microscopy based morphology analysis combined with density functional theory simulations reveal their epitaxial relation. As a consequence, needle-like crystallites of parahexaphenyl grow with their long axes oriented five degrees off the hexagonal boron nitride zigzag directions. In addition, by tuning the deposition temperature and the thickness of hexagonal boron nitride, ordered networks of needle-like crystallites as long as several tens of micrometers can be obtained. A deeper understanding of the organic crystallites growth and ordering at ultra-thin van der Waals dielectric substrates will lead to grain boundary-free organic field effect devices, limited only by the intrinsic properties of the organic semiconductors.

AB - This study focuses on hexagonal boron nitride as an ultra-thin van der Waals dielectric substrate for the epitaxial growth of highly ordered crystalline networks of the organic semiconductor parahexaphenyl. Atomic force microscopy based morphology analysis combined with density functional theory simulations reveal their epitaxial relation. As a consequence, needle-like crystallites of parahexaphenyl grow with their long axes oriented five degrees off the hexagonal boron nitride zigzag directions. In addition, by tuning the deposition temperature and the thickness of hexagonal boron nitride, ordered networks of needle-like crystallites as long as several tens of micrometers can be obtained. A deeper understanding of the organic crystallites growth and ordering at ultra-thin van der Waals dielectric substrates will lead to grain boundary-free organic field effect devices, limited only by the intrinsic properties of the organic semiconductors.

U2 - 10.1038/srep38519

DO - 10.1038/srep38519

M3 - Article

VL - 6.2016

JO - Scientific reports (London : Nature Publishing Group)

JF - Scientific reports (London : Nature Publishing Group)

SN - 2045-2322

M1 - 38519

ER -