A modelling approach to describe the DC current-voltage behaviour of low-voltage zinc oxide varistors
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in: Open ceramics, Jahrgang 6, Nr. June, 100113, 06.2021.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
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TY - JOUR
T1 - A modelling approach to describe the DC current-voltage behaviour of low-voltage zinc oxide varistors
AU - Kaufmann, Benjamin
AU - Billovits, Thomas
AU - Kratzer, Markus
AU - Teichert, Christian
AU - Supancic, Peter
N1 - Publisher Copyright: © 2021 The Author(s)
PY - 2021/6
Y1 - 2021/6
N2 - Zinc oxide varistors are among the most important surge arresters. The current-voltage (I–V) behaviour of these devices can be approximated by a model of electrical networks of grain boundaries arranged in 3D space, where nonlinear resistors mimic the effective grain boundary behaviour of the varistor microstructure. A simplified version of the network model, namely parallel circuits of chains of serially connected resistors of different length (path model), is derived from a fully 3D model of the polycrystalline microstructure. A comparison of the path model with a complex resistor network based on the 3D model demonstrates that the network of highly nonlinear resistors has a very similar DC I–V characteristic as parallel paths of these resistors connected in series. The path model, whose parameters were adapted from microscopic I–V measurements, is able to reproduce the macroscopic I–V behaviour of real low-voltage zinc oxide varistors.
AB - Zinc oxide varistors are among the most important surge arresters. The current-voltage (I–V) behaviour of these devices can be approximated by a model of electrical networks of grain boundaries arranged in 3D space, where nonlinear resistors mimic the effective grain boundary behaviour of the varistor microstructure. A simplified version of the network model, namely parallel circuits of chains of serially connected resistors of different length (path model), is derived from a fully 3D model of the polycrystalline microstructure. A comparison of the path model with a complex resistor network based on the 3D model demonstrates that the network of highly nonlinear resistors has a very similar DC I–V characteristic as parallel paths of these resistors connected in series. The path model, whose parameters were adapted from microscopic I–V measurements, is able to reproduce the macroscopic I–V behaviour of real low-voltage zinc oxide varistors.
KW - I–V characteristics
KW - Micro 4-point probe method
KW - Schottky barrier
KW - Varistor simulation
KW - ZnO varistors
UR - http://www.scopus.com/inward/record.url?scp=85110243635&partnerID=8YFLogxK
U2 - 10.1016/j.oceram.2021.100113
DO - 10.1016/j.oceram.2021.100113
M3 - Article
VL - 6
JO - Open ceramics
JF - Open ceramics
SN - 2666-5395
IS - June
M1 - 100113
ER -