Topographical and structural investigations of phosphorous-doped silicon films

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Topographical and structural investigations of phosphorous-doped silicon films. / Sorschag, K; Gold, H; Lutz, J et al.
In: Applied physics / A (Series A, Materials science & processing), Vol. 66, 1998, p. 999-1002.

Research output: Contribution to journalArticleResearchpeer-review

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@article{5339a2110f5b4debb0c05adc85223372,
title = "Topographical and structural investigations of phosphorous-doped silicon films",
author = "K Sorschag and H Gold and J Lutz and Friedemar Kuchar and M Pippan and H Noll",
year = "1998",
language = "English",
volume = "66",
pages = "999--1002",
journal = "Applied physics / A (Series A, Materials science & processing)",
issn = "0340-3793",
publisher = "Springer Berlin",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Topographical and structural investigations of phosphorous-doped silicon films

AU - Sorschag, K

AU - Gold, H

AU - Lutz, J

AU - Kuchar, Friedemar

AU - Pippan, M

AU - Noll, H

PY - 1998

Y1 - 1998

M3 - Article

VL - 66

SP - 999

EP - 1002

JO - Applied physics / A (Series A, Materials science & processing)

JF - Applied physics / A (Series A, Materials science & processing)

SN - 0340-3793

ER -