Research output

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1988
Published
CONTROL OF CARRIER LIFETIMES IN PBTE DOPING SUPERLATTICES
Bauer, G., Oswald, J., Goltsos, W. & Nurmikko, AV., 1988, In: Journal of applied physics. 63, p. 2179-2181
Research output: Contribution to journal › Article › Research › peer-review
Published
Control of carrier lifetimes in PbTe nipi superlattices by external photo injection
Oswald, J., Bauer, G., Goltsos, W. & Nurmikko, AV., 1988, In: Superlattices and microstructures. 4, p. 159-165
Research output: Contribution to journal › Article › Research › peer-review
1987
Published
EXPERIMENTAL IDENTIFICATION OF THE ENERGY-LEVEL OF SUBSTITUTIONAL MANGANESE IN SILICON
Haider, M., Sitter, H., Czaputa, R., Feichtinger, H. & Oswald, J., 1987, In: Journal of applied physics. 62, p. 3785-3790
Research output: Contribution to journal › Article › Research › peer-review
Published
OBSERVATION OF ELECTRONIC SUBBANDS IN PBTE NIPI STRUCTURES
Pichler, P., Clemens, H., Krenn, H., Oswald, J., Bauer, G. & von Orthenberg, M., 1987, In: Superlattices and microstructures. 3, p. 225-229
Research output: Contribution to journal › Article › Research › peer-review
1985
Published
ENERGY-LEVEL OF THE 0 TO + CHARGE TRANSITION OF SUBSTITUTIONAL MANGANESE IN SILICON
Czaputa, R., Feichtinger, H., Oswald, J., Sitter, H. & Haider, M., 1985, In: Physical review letters. 55, p. 758-760
Research output: Contribution to journal › Article › Research › peer-review
1984
Published
A USEFUL METHOD TO IMPROVE CONVERGENCE IN LEAST-SQUARES FITTING PROCEDURES
Oswald, J., Feichtinger, H. & Czaputa, R., 1984, In: Physica status solidi / A. 81, p. 343-351
Research output: Contribution to journal › Article › Research › peer-review
1983
Published
ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON
Czaputa, R., Feichtinger, H. & Oswald, J., 1983, In: Solid state communications. 47, p. 223-226
Research output: Contribution to journal › Article › Research › peer-review

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Research Portal

Research output

CONTROL OF CARRIER LIFETIMES IN PBTE DOPING SUPERLATTICES

Control of carrier lifetimes in PbTe nipi superlattices by external photo injection

EXPERIMENTAL IDENTIFICATION OF THE ENERGY-LEVEL OF SUBSTITUTIONAL MANGANESE IN SILICON

OBSERVATION OF ELECTRONIC SUBBANDS IN PBTE NIPI STRUCTURES

ENERGY-LEVEL OF THE 0 TO + CHARGE TRANSITION OF SUBSTITUTIONAL MANGANESE IN SILICON

A USEFUL METHOD TO IMPROVE CONVERGENCE IN LEAST-SQUARES FITTING PROCEDURES

ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON

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