Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures

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Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures. / Hofer, Christian; Teichert, Christian; Werner, Jens et al.
In: Applied surface science, Vol. 256, 2009, p. 267-273.

Research output: Contribution to journalArticleResearchpeer-review

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Hofer C, Teichert C, Werner J, Lyutovich K, Kasper E. Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures. Applied surface science. 2009;256:267-273. doi: 10.1016/j.apsusc.2009.08.013

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@article{75b68e37270646c4acafc8d14b20564c,
title = "Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures",
author = "Christian Hofer and Christian Teichert and Jens Werner and Klara Lyutovich and Erich Kasper",
year = "2009",
doi = "10.1016/j.apsusc.2009.08.013",
language = "English",
volume = "256",
pages = "267--273",
journal = "Applied surface science",
issn = "0169-4332",
publisher = "Elsevier",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Ion-bombardment induced morphology change of device related SiGe multilayer heterostructures

AU - Hofer, Christian

AU - Teichert, Christian

AU - Werner, Jens

AU - Lyutovich, Klara

AU - Kasper, Erich

PY - 2009

Y1 - 2009

U2 - 10.1016/j.apsusc.2009.08.013

DO - 10.1016/j.apsusc.2009.08.013

M3 - Article

VL - 256

SP - 267

EP - 273

JO - Applied surface science

JF - Applied surface science

SN - 0169-4332

ER -