Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction
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In: Thin solid films, Vol. 722.2021, No. 31 March, 138571, 07.02.2021.
Research output: Contribution to journal › Article › Research › peer-review
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TY - JOUR
T1 - Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction
AU - Hlushko, K.
AU - Mackova, A.
AU - Zalesak, J.
AU - Burghammer, M.
AU - Davydok, A.
AU - Krywka, C.
AU - Daniel, R.
AU - Keckes, J.
AU - Todt, J.
PY - 2021/2/7
Y1 - 2021/2/7
N2 - The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.
AB - The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.
UR - http://www.scopus.com/inward/record.url?scp=85101013325&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2021.138571
DO - 10.1016/j.tsf.2021.138571
M3 - Article
VL - 722.2021
JO - Thin solid films
JF - Thin solid films
SN - 0040-6090
IS - 31 March
M1 - 138571
ER -
