TY - JOUR

T1 - EUV Bragg reflectors with photonic superlattices

AU - Meisels, Ronald

AU - Kuchar, Friedemar

PY - 2017/12/11

Y1 - 2017/12/11

N2 - The basic properties in the extreme ultraviolet (EUV) of one-dimensional photonic crystals (Bragg reflectors) with incorporated superlattices are investigated by a numerical study using the multiple scattering method. The superlattice is realized in the “standard” Mo/Si system by periodically replacing certain Mo layers by Si layers. At 13.5 nm–the wavelength of interest for EUV lithography–the superlattice sharpens the reflection peak at normal incidence with only weak reduction of the peak value. Between normal incidence and total reflection at large angles, additional reflection peaks appear at certain angles where the reflection is zero for the “standard” Mo/Si system. By combining different superlattices and depth grading, the range of additional reflection peaks is extended towards all-angle reflection. The effect of interface imperfections is considered for the case of the interdiffusion of Mo and Si. The extension to other frequency ranges is addressed via band structure calculations.

AB - The basic properties in the extreme ultraviolet (EUV) of one-dimensional photonic crystals (Bragg reflectors) with incorporated superlattices are investigated by a numerical study using the multiple scattering method. The superlattice is realized in the “standard” Mo/Si system by periodically replacing certain Mo layers by Si layers. At 13.5 nm–the wavelength of interest for EUV lithography–the superlattice sharpens the reflection peak at normal incidence with only weak reduction of the peak value. Between normal incidence and total reflection at large angles, additional reflection peaks appear at certain angles where the reflection is zero for the “standard” Mo/Si system. By combining different superlattices and depth grading, the range of additional reflection peaks is extended towards all-angle reflection. The effect of interface imperfections is considered for the case of the interdiffusion of Mo and Si. The extension to other frequency ranges is addressed via band structure calculations.

KW - EUV Lithographie

KW - Photonic Crystals

KW - Multilayer

U2 - 10.1364/OE.25.032215

DO - 10.1364/OE.25.032215

M3 - Article

VL - 25.2017

SP - 32215

EP - 32226

JO - Optics express

JF - Optics express

SN - 1094-4087

IS - 26

ER -