Enhanced Ti0.84Ta0.16N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si (001) wafers and Cu overlayers

Enhanced Ti_0.84Ta_0.16N diffusion barriers, grown by a hybrid sputtering technique with no substrate heating, between Si (001) wafers and Cu overlayers

Research output: Contribution to journal › Article › Research › peer-review

Original language	English
Pages (from-to)	1-9
Journal	Scientific reports (London : Nature Publishing Group)
DOIs	https://doi.org/10.1038/s41598-018-23782-9
Publication status	Published - 2018