Electrically reversible cracks in an intermetallic film controlled by an electric field

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Electrically reversible cracks in an intermetallic film controlled by an electric field. / Liu, Z.Q. ; Liu, J.H.; Biegalski, M.D. et al.
In: Nature Communications, Vol. 41.2018, No. 9, 9, 03.01.2018.

Research output: Contribution to journal › Article › Research › peer-review

Harvard

Liu, ZQ, Liu, JH, Biegalski, MD, Hu, J-M, Shang, SL, Ji, Y, Wang, JM, Hsu, SL, Wong, AT, Cordill, M, Gludovatz, B, Marker, C, Yan, H, Feng, ZX, You, L, Lin, MW, Ward, TZ, Liu, ZK, Jiang, CB, Chen, LQ, Ritchie, RO, Christen, HM & Ramesh, R 2018, 'Electrically reversible cracks in an intermetallic film controlled by an electric field', Nature Communications, vol. 41.2018, no. 9, 9. https://doi.org/10.1038/s41467-017-02454-8

APA

Liu, Z. Q., Liu, J. H., Biegalski, M. D., Hu, J.-M., Shang, S. L., Ji, Y., Wang, J. M., Hsu, S. L., Wong, A. T., Cordill, M., Gludovatz, B., Marker, C., Yan, H., Feng, Z. X., You, L., Lin, M. W., Ward, T. Z., Liu, Z. K., Jiang, C. B., ... Ramesh, R. (2018). Electrically reversible cracks in an intermetallic film controlled by an electric field. Nature Communications, 41.2018(9), Article 9. https://doi.org/10.1038/s41467-017-02454-8

Vancouver

Liu ZQ, Liu JH, Biegalski MD, Hu JM, Shang SL, Ji Y et al. Electrically reversible cracks in an intermetallic film controlled by an electric field. Nature Communications. 2018 Jan 3;41.2018(9):9. doi: 10.1038/s41467-017-02454-8

Author

Liu, Z.Q. ; Liu, J.H. ; Biegalski, M.D. et al. / Electrically reversible cracks in an intermetallic film controlled by an electric field. In: Nature Communications. 2018 ; Vol. 41.2018, No. 9.

Bibtex - Download

@article{a804ca0eed2c44298621224230022332,
title = "Electrically reversible cracks in an intermetallic film controlled by an electric field",
abstract = "Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on–off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.",
author = "Z.Q. Liu and J.H. Liu and M.D. Biegalski and J.-M. Hu and S.L. Shang and Y. Ji and J.M. Wang and S.L. Hsu and A.T. Wong and Megan Cordill and B. Gludovatz and C. Marker and H. Yan and Z.X. Feng and L. You and M.W. Lin and T.Z. Ward and Z.K. Liu and C.B. Jiang and L.Q. Chen and R.O. Ritchie and H.M. Christen and R. Ramesh",
year = "2018",
month = jan,
day = "3",
doi = "10.1038/s41467-017-02454-8",
language = "English",
volume = "41.2018",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",
number = "9",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Electrically reversible cracks in an intermetallic film controlled by an electric field

AU - Liu, Z.Q.

AU - Liu, J.H.

AU - Biegalski, M.D.

AU - Hu, J.-M.

AU - Shang, S.L.

AU - Ji, Y.

AU - Wang, J.M.

AU - Hsu, S.L.

AU - Wong, A.T.

AU - Cordill, Megan

AU - Gludovatz, B.

AU - Marker, C.

AU - Yan, H.

AU - Feng, Z.X.

AU - You, L.

AU - Lin, M.W.

AU - Ward, T.Z.

AU - Liu, Z.K.

AU - Jiang, C.B.

AU - Chen, L.Q.

AU - Ritchie, R.O.

AU - Christen, H.M.

AU - Ramesh, R.

PY - 2018/1/3

Y1 - 2018/1/3

N2 - Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on–off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

AB - Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on–off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

U2 - 10.1038/s41467-017-02454-8

DO - 10.1038/s41467-017-02454-8

M3 - Article

VL - 41.2018

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

IS - 9

M1 - 9

ER -

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