Antibacterial Silicon Oxide Thin Films Doped with Zinc and Copper Grown by Atmospheric Pressure Plasma Chemical Vapor Deposition

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Authors

External Organisational units

  • Innovent e.V. Technology Development Jena

Abstract

Zn-doped and Cu-doped SiO x films were synthesized by atmospheric pressure plasma chemical vapor deposition to study their antibacterial efficiency against Gram-negative Escherichia coli and their cytotoxic effect on the growth of mouse cells. Zn-rich and Cu-rich particles with diameters up to several microns were found to be homogeneously distributed within the SiO x films. For both doping elements, bacteria are killed within the first three hours after exposure to the film surface. In contrast, mouse cells grow well on the surfaces of both film types, with a slight inhibition present only after the first day of exposure. The obtained results indicate that the films show a high potential for use as effective antibacterial surfaces for medical applications.

Details

Original languageEnglish
Article number255
Pages (from-to)1-14
Number of pages14
JournalNanomaterials
Volume9.2019
Issue number2
DOIs
Publication statusPublished - Feb 2019