A Sequential Finite Volume Method / Finite Element Analysis of a Power Electronic Semiconductor Chip

Research output: Contribution to conferencePaperpeer-review

Standard

A Sequential Finite Volume Method / Finite Element Analysis of a Power Electronic Semiconductor Chip. / Gschwandl, Mario; Fuchs, P.F.; Antretter, Thomas et al.
2019. 1509-1514 Paper presented at 69th IEEE Electronic Components and Technology Conference, ECTC 2019, Las Vegas, United States.

Research output: Contribution to conferencePaperpeer-review

Harvard

Gschwandl, M, Fuchs, PF, Antretter, T, Pfost, M, Mitev, I, Tao, Q, Krivec, T, Schingale, A & Decker, M 2019, 'A Sequential Finite Volume Method / Finite Element Analysis of a Power Electronic Semiconductor Chip', Paper presented at 69th IEEE Electronic Components and Technology Conference, ECTC 2019, Las Vegas, United States, 28/05/19 - 31/05/19 pp. 1509-1514. https://doi.org/10.1109/ECTC.2019.00232

APA

Gschwandl, M., Fuchs, P. F., Antretter, T., Pfost, M., Mitev, I., Tao, Q., Krivec, T., Schingale, A., & Decker, M. (2019). A Sequential Finite Volume Method / Finite Element Analysis of a Power Electronic Semiconductor Chip. 1509-1514. Paper presented at 69th IEEE Electronic Components and Technology Conference, ECTC 2019, Las Vegas, United States. https://doi.org/10.1109/ECTC.2019.00232

Vancouver

Gschwandl M, Fuchs PF, Antretter T, Pfost M, Mitev I, Tao Q et al.. A Sequential Finite Volume Method / Finite Element Analysis of a Power Electronic Semiconductor Chip. 2019. Paper presented at 69th IEEE Electronic Components and Technology Conference, ECTC 2019, Las Vegas, United States. doi: 10.1109/ECTC.2019.00232

Author

Gschwandl, Mario ; Fuchs, P.F. ; Antretter, Thomas et al. / A Sequential Finite Volume Method / Finite Element Analysis of a Power Electronic Semiconductor Chip. Paper presented at 69th IEEE Electronic Components and Technology Conference, ECTC 2019, Las Vegas, United States.

Bibtex - Download

@conference{f6755d8b9ed347b9b474dd02d3fb80e2,
title = "A Sequential Finite Volume Method / Finite Element Analysis of a Power Electronic Semiconductor Chip",
abstract = "The shift of the automotive industry towards e-mobility results in a strong demand for highly reliable power electronics. A major goal in their design is to improve the thermal management of all components. Most commonly power electronics are subject to high temperature loads, either internally generated by an active part (semiconductor) or externally applied. Depending on the materials used, such as metals, polymers, etc., thermo-mechanical stresses will arise and promote different failure mechanisms. The complexity of the loading situation, especially in the case of internally generated loads, calls for a sequential approach, consisting of a Finite Volume Method (FVM) and a Finite Element Analysis (FEA) for the lifetime assessment of these components. Using this methodology, the highly complex temperature distribution of any power package can be determined. Consequently, accurate results for the thermo-mechanical stress situation from chip to power packages are deduced and critical spots are identified. Based on the obtained stress fields, an enhanced lifetime assessment of power packages can be performed. The proposed methodology is validated on a standard TO-263 package for a short circuit loading scenario.",
keywords = "power electronics, finite volume method, electro-thermo-mechanical simulation, Finite element analysis",
author = "Mario Gschwandl and P.F. Fuchs and Thomas Antretter and Martin Pfost and I. Mitev and Qi Tao and Thomas Krivec and Angelika Schingale and Michael Decker",
year = "2019",
doi = "10.1109/ECTC.2019.00232",
language = "English",
pages = "1509--1514",
note = "69th IEEE Electronic Components and Technology Conference, ECTC 2019 ; Conference date: 28-05-2019 Through 31-05-2019",

}

RIS (suitable for import to EndNote) - Download

TY - CONF

T1 - A Sequential Finite Volume Method / Finite Element Analysis of a Power Electronic Semiconductor Chip

AU - Gschwandl, Mario

AU - Fuchs, P.F.

AU - Antretter, Thomas

AU - Pfost, Martin

AU - Mitev, I.

AU - Tao, Qi

AU - Krivec, Thomas

AU - Schingale, Angelika

AU - Decker, Michael

PY - 2019

Y1 - 2019

N2 - The shift of the automotive industry towards e-mobility results in a strong demand for highly reliable power electronics. A major goal in their design is to improve the thermal management of all components. Most commonly power electronics are subject to high temperature loads, either internally generated by an active part (semiconductor) or externally applied. Depending on the materials used, such as metals, polymers, etc., thermo-mechanical stresses will arise and promote different failure mechanisms. The complexity of the loading situation, especially in the case of internally generated loads, calls for a sequential approach, consisting of a Finite Volume Method (FVM) and a Finite Element Analysis (FEA) for the lifetime assessment of these components. Using this methodology, the highly complex temperature distribution of any power package can be determined. Consequently, accurate results for the thermo-mechanical stress situation from chip to power packages are deduced and critical spots are identified. Based on the obtained stress fields, an enhanced lifetime assessment of power packages can be performed. The proposed methodology is validated on a standard TO-263 package for a short circuit loading scenario.

AB - The shift of the automotive industry towards e-mobility results in a strong demand for highly reliable power electronics. A major goal in their design is to improve the thermal management of all components. Most commonly power electronics are subject to high temperature loads, either internally generated by an active part (semiconductor) or externally applied. Depending on the materials used, such as metals, polymers, etc., thermo-mechanical stresses will arise and promote different failure mechanisms. The complexity of the loading situation, especially in the case of internally generated loads, calls for a sequential approach, consisting of a Finite Volume Method (FVM) and a Finite Element Analysis (FEA) for the lifetime assessment of these components. Using this methodology, the highly complex temperature distribution of any power package can be determined. Consequently, accurate results for the thermo-mechanical stress situation from chip to power packages are deduced and critical spots are identified. Based on the obtained stress fields, an enhanced lifetime assessment of power packages can be performed. The proposed methodology is validated on a standard TO-263 package for a short circuit loading scenario.

KW - power electronics

KW - finite volume method

KW - electro-thermo-mechanical simulation

KW - Finite element analysis

U2 - 10.1109/ECTC.2019.00232

DO - 10.1109/ECTC.2019.00232

M3 - Paper

SP - 1509

EP - 1514

T2 - 69th IEEE Electronic Components and Technology Conference, ECTC 2019

Y2 - 28 May 2019 through 31 May 2019

ER -