Josef Oswald
(Former)
Research output
- Published
Size scaling of the exchange interaction in the quantum Hall effect regime
Werner, D. & Oswald, J., 30 Dec 2020, In: Physical Review B. 102.2020, 23, 6 p., 235305.Research output: Contribution to journal › Article › Research › peer-review
- Published
Edge versus bulk current in the quantum Hall effect regime
Uiberacker, C. & Oswald, J., 2008.Research output: Contribution to conference › Poster › Research › peer-review
- Published
Size-dependence of transport in Integer Quantum Hall systems
Uiberacker, C., Oswald, J. & Römer, R., 2008.Research output: Contribution to conference › Poster › Research › peer-review
- Published
Influence of the metallic contacts on the transport in Integer Quantum Hall systems
Uiberacker, C., Oswald, J. & Stecher, C., 2008.Research output: Contribution to conference › Poster › Research › peer-review
- Published
Systematic study of nonideal contacts in integer quantum Hall systems
Uiberacker, C., Stecher, C. & Oswald, J., 2009, In: Physical review : B, Condensed matter and materials physics. 80, p. 235331-1- 235331-11Research output: Contribution to journal › Article › Research › peer-review
- Published
Microscopic details of the integer quantum Hall effect in an anti-Hall
Uiberacker, C., Stecher, C. & Oswald, J., 2012, In: Physical review : B, Condensed matter and materials physics. 86, p. 1-7Research output: Contribution to journal › Article › Research › peer-review
- Published
The effect of gating in samples of Anti-Hall bars within a Hall bar
Uiberacker, C., Stecher, C. & Oswald, J., 2010.Research output: Contribution to conference › Poster › Research › peer-review
- Published
Pattern formation in PbTe multilayer films
Teichert, C., Jamnig, B. D. & Oswald, J., 2000, In: Surface Science. p. 823-826Research output: Contribution to journal › Article › Research › peer-review
- Published
Design and modelling of PbTe wide quantum wells based on the n-i-p-i- concept
Span, G., Ganitzer, P., Heigl, G., Homer, A. & Oswald, J., 1996.Research output: Contribution to conference › Poster › Research › peer-review
- Published
Defect induced shortening of excess carrier lifetime in single period nipi structures
Span, G., Oswald, J. & Heigl, G., 1998, In: Materials science and technology. 14, p. 1307-1313Research output: Contribution to journal › Article › Research › peer-review