Visible light emission in graphene field effect transistors

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

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Visible light emission in graphene field effect transistors. / Beltaos, Angela; Johan Bergren1, Adam; Bosnick, Ken et al.
in: Nano Futures, Jahrgang 1.2017, Nr. 2, 025004, 28.09.2017.

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

Harvard

Beltaos, A, Johan Bergren1, A, Bosnick, K, Pekas, N, Lane, S, Cui, K, Matkovic, A & Meldrum, A 2017, 'Visible light emission in graphene field effect transistors', Nano Futures, Jg. 1.2017, Nr. 2, 025004. https://doi.org/10.1088/2399-1984/aa8b04

APA

Beltaos, A., Johan Bergren1, A., Bosnick, K., Pekas, N., Lane, S., Cui, K., Matkovic, A., & Meldrum, A. (2017). Visible light emission in graphene field effect transistors. Nano Futures, 1.2017(2), Artikel 025004. https://doi.org/10.1088/2399-1984/aa8b04

Vancouver

Beltaos A, Johan Bergren1 A, Bosnick K, Pekas N, Lane S, Cui K et al. Visible light emission in graphene field effect transistors. Nano Futures. 2017 Sep 28;1.2017(2):025004. doi: 10.1088/2399-1984/aa8b04

Author

Beltaos, Angela ; Johan Bergren1, Adam ; Bosnick, Ken et al. / Visible light emission in graphene field effect transistors. in: Nano Futures. 2017 ; Jahrgang 1.2017, Nr. 2.

Bibtex - Download

@article{639abd8bc4c24cddbcda97d727dd82cf,
title = "Visible light emission in graphene field effect transistors",
abstract = "We present an experimental study of the light-emitting properties of graphene field effect transistors in the visible and near infrared spectral range. Using spectroscopic and imaging techniques, the effects of source–drain and gate voltages on the spectrum and location of the light emission were investigated. Raman spectroscopy, electronic measurements, and scanning electron microscopy combined with energy dispersive x-ray spectroscopy were used to characterize the devices. Results show that the spectral features (peak spectral intensity and wavelength) were controllable via applied source–drain or gate voltages, while the physical location of the light emission was strongly affected by scattering sites, including defects, nanoparticles, and edges.A possible explanation of the observed light emission is the outcoupling of surface plasmons excited by hot carriers in graphene according to the quantum {\v C}erenkov effect. Hence, this work suggests the feasibility of all-electrical graphene devices for applications in light emission and plasmonics.",
keywords = "graphene, stimulated emission",
author = "Angela Beltaos and {Johan Bergren1}, Adam and Ken Bosnick and Nikola Pekas and Stephen Lane and Kai Cui and Aleksandar Matkovic and Al Meldrum",
year = "2017",
month = sep,
day = "28",
doi = "10.1088/2399-1984/aa8b04",
language = "English",
volume = "1.2017",
journal = "Nano Futures",
issn = "2399-1984",
publisher = "IOP Publishing Ltd.",
number = "2",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Visible light emission in graphene field effect transistors

AU - Beltaos, Angela

AU - Johan Bergren1, Adam

AU - Bosnick, Ken

AU - Pekas, Nikola

AU - Lane, Stephen

AU - Cui, Kai

AU - Matkovic, Aleksandar

AU - Meldrum, Al

PY - 2017/9/28

Y1 - 2017/9/28

N2 - We present an experimental study of the light-emitting properties of graphene field effect transistors in the visible and near infrared spectral range. Using spectroscopic and imaging techniques, the effects of source–drain and gate voltages on the spectrum and location of the light emission were investigated. Raman spectroscopy, electronic measurements, and scanning electron microscopy combined with energy dispersive x-ray spectroscopy were used to characterize the devices. Results show that the spectral features (peak spectral intensity and wavelength) were controllable via applied source–drain or gate voltages, while the physical location of the light emission was strongly affected by scattering sites, including defects, nanoparticles, and edges.A possible explanation of the observed light emission is the outcoupling of surface plasmons excited by hot carriers in graphene according to the quantum Čerenkov effect. Hence, this work suggests the feasibility of all-electrical graphene devices for applications in light emission and plasmonics.

AB - We present an experimental study of the light-emitting properties of graphene field effect transistors in the visible and near infrared spectral range. Using spectroscopic and imaging techniques, the effects of source–drain and gate voltages on the spectrum and location of the light emission were investigated. Raman spectroscopy, electronic measurements, and scanning electron microscopy combined with energy dispersive x-ray spectroscopy were used to characterize the devices. Results show that the spectral features (peak spectral intensity and wavelength) were controllable via applied source–drain or gate voltages, while the physical location of the light emission was strongly affected by scattering sites, including defects, nanoparticles, and edges.A possible explanation of the observed light emission is the outcoupling of surface plasmons excited by hot carriers in graphene according to the quantum Čerenkov effect. Hence, this work suggests the feasibility of all-electrical graphene devices for applications in light emission and plasmonics.

KW - graphene

KW - stimulated emission

U2 - 10.1088/2399-1984/aa8b04

DO - 10.1088/2399-1984/aa8b04

M3 - Article

VL - 1.2017

JO - Nano Futures

JF - Nano Futures

SN - 2399-1984

IS - 2

M1 - 025004

ER -