TY - JOUR

T1 - Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

AU - Hlushko, K.

AU - Mackova, A.

AU - Zalesak, J.

AU - Burghammer, M.

AU - Davydok, A.

AU - Krywka, C.

AU - Daniel, R.

AU - Keckes, J.

AU - Todt, J.

PY - 2021/2/7

Y1 - 2021/2/7

N2 - The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.

AB - The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.

UR - http://www.scopus.com/inward/record.url?scp=85101013325&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2021.138571

DO - 10.1016/j.tsf.2021.138571

M3 - Article

VL - 722.2021

JO - Thin solid films

JF - Thin solid films

SN - 0040-6090

IS - 31 March

M1 - 138571

ER -