Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

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Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction. / Hlushko, K.; Mackova, A.; Zalesak, J. et al.
in: Thin solid films, Jahrgang 722.2021, Nr. 31 March, 138571, 07.02.2021.

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

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Hlushko K, Mackova A, Zalesak J, Burghammer M, Davydok A, Krywka C et al. Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction. Thin solid films. 2021 Feb 7;722.2021(31 March):138571. doi: 10.1016/j.tsf.2021.138571

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@article{2bad621807d24f478fed45960444a853,
title = "Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction",
abstract = "The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.",
author = "K. Hlushko and A. Mackova and J. Zalesak and M. Burghammer and A. Davydok and C. Krywka and R. Daniel and J. Keckes and J. Todt",
year = "2021",
month = feb,
day = "7",
doi = "10.1016/j.tsf.2021.138571",
language = "English",
volume = "722.2021",
journal = "Thin solid films",
issn = "0040-6090",
publisher = "Elsevier",
number = "31 March",

}

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TY - JOUR

T1 - Ion irradiation-induced localized stress relaxation in W thin film revealed by cross-sectional X-ray nanodiffraction

AU - Hlushko, K.

AU - Mackova, A.

AU - Zalesak, J.

AU - Burghammer, M.

AU - Davydok, A.

AU - Krywka, C.

AU - Daniel, R.

AU - Keckes, J.

AU - Todt, J.

PY - 2021/2/7

Y1 - 2021/2/7

N2 - The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.

AB - The influence of ion irradiation on residual stress and microstructure of thin films is not fully understood. Here, 5 MeV Si2+ ions were used to irradiate a 7 µm thick tungsten film prepared by magnetron sputtering. Cross-sectional X-ray nanodiffraction and electron microscopy analyses revealed a depth-localized relaxation of in-plane compressive residual stresses from to GPa after the irradiation, which is correlated with the calculated displacements per atom within a ~2 µm thick film region. The relaxation can be explained by the irradiation-induced removal of point defects from the crystal lattice, resulting in a reduction of strains of the 3rd order, manifested by a decrease of X-ray diffraction peak broadening, an increase of peak intensities and a decrease of lattice parameter. The results indicate that ion irradiation enables control over the residual stress state at distinct depths in the material.

UR - http://www.scopus.com/inward/record.url?scp=85101013325&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2021.138571

DO - 10.1016/j.tsf.2021.138571

M3 - Article

VL - 722.2021

JO - Thin solid films

JF - Thin solid films

SN - 0040-6090

IS - 31 March

M1 - 138571

ER -