ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Standard
ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON. / Czaputa, Rainer; Feichtinger, Helmut; Oswald, Josef.
in: Solid state communications, Jahrgang 47, 1983, S. 223-226.
in: Solid state communications, Jahrgang 47, 1983, S. 223-226.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Harvard
Czaputa, R, Feichtinger, H & Oswald, J 1983, 'ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON', Solid state communications, Jg. 47, S. 223-226.
APA
Czaputa, R., Feichtinger, H., & Oswald, J. (1983). ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON. Solid state communications, 47, 223-226.
Vancouver
Czaputa R, Feichtinger H, Oswald J. ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON. Solid state communications. 1983;47:223-226.
Author
Bibtex - Download
@article{0c2152a5d5c74ed79a5b1b7c6eb77c9e,
title = "ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON",
author = "Rainer Czaputa and Helmut Feichtinger and Josef Oswald",
year = "1983",
language = "English",
volume = "47",
pages = "223--226",
journal = "Solid state communications",
issn = "0038-1098",
publisher = "Elsevier",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON
AU - Czaputa, Rainer
AU - Feichtinger, Helmut
AU - Oswald, Josef
PY - 1983
Y1 - 1983
M3 - Article
VL - 47
SP - 223
EP - 226
JO - Solid state communications
JF - Solid state communications
SN - 0038-1098
ER -
