Doping Dependence of the Electronic Structure and the Raman-active Modes in La2-xBaxCuO4

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

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Doping Dependence of the Electronic Structure and the Raman-active Modes in La2-xBaxCuO4. / Thonhauser, Timo; Draxl, Claudia.
in: Physical review : B, Condensed matter and materials physics, Jahrgang 67, 2003, S. 134508-1-134508-7.

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

Bibtex - Download

@article{8b433a5d86204e8da930f057047bcc3d,
title = "Doping Dependence of the Electronic Structure and the Raman-active Modes in La2-xBaxCuO4",
author = "Timo Thonhauser and Claudia Draxl",
year = "2003",
doi = "10.1103/PhysRevB.67.134508",
language = "English",
volume = "67",
pages = "134508--1--134508--7",
journal = "Physical review : B, Condensed matter and materials physics",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - Doping Dependence of the Electronic Structure and the Raman-active Modes in La2-xBaxCuO4

AU - Thonhauser, Timo

AU - Draxl, Claudia

PY - 2003

Y1 - 2003

U2 - 10.1103/PhysRevB.67.134508

DO - 10.1103/PhysRevB.67.134508

M3 - Article

VL - 67

SP - 134508-1-134508-7

JO - Physical review : B, Condensed matter and materials physics

JF - Physical review : B, Condensed matter and materials physics

SN - 0163-1829

ER -