All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position

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All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position. / Sharma, S.; Dehwurst, J.K.; Draxl, Claudia.
in: Physical review letters, Jahrgang 95, 2005, S. 136402-136402.

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

Bibtex - Download

@article{68f3f471da1844968dbfb5fbf90a3f77,
title = "All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position",
author = "S. Sharma and J.K. Dehwurst and Claudia Draxl",
year = "2005",
doi = "10.1103/PhysRevLett.95.136402",
language = "English",
volume = "95",
pages = "136402--136402",
journal = "Physical review letters",
issn = "0031-9007",
publisher = "American Physical Society",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - All-Electron Exact Exchange Treatment of Semiconductors: Effect of Core-Valence Interaction on Band-Gap and d-Band Position

AU - Sharma, S.

AU - Dehwurst, J.K.

AU - Draxl, Claudia

PY - 2005

Y1 - 2005

U2 - 10.1103/PhysRevLett.95.136402

DO - 10.1103/PhysRevLett.95.136402

M3 - Article

VL - 95

SP - 136402

EP - 136402

JO - Physical review letters

JF - Physical review letters

SN - 0031-9007

ER -