A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

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A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy. / Pleschinger, A; Lutz, Josef; Kuchar, Friedemar.
in: Journal of applied physics, Jahrgang 81, 1997, S. 6749-6754.

Publikationen: Beitrag in FachzeitschriftArtikelForschung(peer-reviewed)

Bibtex - Download

@article{75b651ab67e447a98654cb41929072a9,
title = "A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy",
author = "A Pleschinger and Josef Lutz and Friedemar Kuchar",
year = "1997",
language = "English",
volume = "81",
pages = "6749--6754",
journal = "Journal of applied physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",

}

RIS (suitable for import to EndNote) - Download

TY - JOUR

T1 - A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy

AU - Pleschinger, A

AU - Lutz, Josef

AU - Kuchar, Friedemar

PY - 1997

Y1 - 1997

M3 - Article

VL - 81

SP - 6749

EP - 6754

JO - Journal of applied physics

JF - Journal of applied physics

SN - 0021-8979

ER -