A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Standard
A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy. / Pleschinger, A; Lutz, Josef; Kuchar, Friedemar.
in: Journal of applied physics, Jahrgang 81, 1997, S. 6749-6754.
in: Journal of applied physics, Jahrgang 81, 1997, S. 6749-6754.
Publikationen: Beitrag in Fachzeitschrift › Artikel › Forschung › (peer-reviewed)
Harvard
Pleschinger, A, Lutz, J & Kuchar, F 1997, 'A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy', Journal of applied physics, Jg. 81, S. 6749-6754.
APA
Pleschinger, A., Lutz, J., & Kuchar, F. (1997). A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy. Journal of applied physics, 81, 6749-6754.
Vancouver
Pleschinger A, Lutz J, Kuchar F. A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy. Journal of applied physics. 1997;81:6749-6754.
Author
Bibtex - Download
@article{75b651ab67e447a98654cb41929072a9,
title = "A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy",
author = "A Pleschinger and Josef Lutz and Friedemar Kuchar",
year = "1997",
language = "English",
volume = "81",
pages = "6749--6754",
journal = "Journal of applied physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
}
RIS (suitable for import to EndNote) - Download
TY - JOUR
T1 - A structural and topographical study of low-pressure chemical-vapor-deposited polysilicon by scanning probe microscopy
AU - Pleschinger, A
AU - Lutz, Josef
AU - Kuchar, Friedemar
PY - 1997
Y1 - 1997
M3 - Article
VL - 81
SP - 6749
EP - 6754
JO - Journal of applied physics
JF - Journal of applied physics
SN - 0021-8979
ER -
