Enhanced terahertz response of diluted magnetic semiconductor Zn1-xMnxTe crystals

Dong, J., Xu, Y., Ji, L. L., Xiao, B., Zhang, B. B., Guo, L., Zhang, C., Teichert, C. & Jie, W., 1 Jan. 2018, in: Optical Materials Express. 8, 1, S. 157-164 309070.

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Twin boundary dominated electric field distribution in CdZnTe detectors

Dong, J., Jie, W., Yu, J., Guo, R., Teichert, C., Gradwohl, K.-P., Zhang, B. B., Luo, X., Xi, S. & Xu, Y., 2018, in: Chinese physics : a publication of the Chinese Physical Society = Zhongguo-wuli. B. 2018, Vol 27 No. 11, S. 117202-1 117202 S.

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Terahertz emission from layered GaTe crystal due to surface lattice reorganization and in-plane noncubic mobility anisotropy

Dong, J., Gradwohl, K.-P., Xu, Y., Wang, T., Zhang, B., Xiao, B., Teichert, C. & Jie, W., 15 Apr. 2019, in: Photonics research / OSA. 7.2019, 5, S. 518-525 8 S.

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Dynamics of Monolayer–Island Transitions in 2,7-Dioctylbenzothienobenzthiophene Thin Films

Dohr, M., Werzer, O., Shen, Q., Salzmann, I., Teichert, C., Ruzié, C., Schweicher, G., Geerts, H., Sferrazza, M. & Resel, R., 2013, in: CHEMPHYSCHEM. 14, S. 2554-2559

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Reversibility of temperature driven discrete layer-by-layer formation of dioctyl-benzothieno-benzothiophene films

Dohr, M., Ehmann, H. M. A., Jones, A. O. F., Salzmann, I., Shen, Q., Teichert, C., Ruzié, C., Schweicher, G., Geerts, Y. H., Resel, R., Sferrazza, M. & Werzer, O., 27 Feb. 2017, in: Soft Matter. 13.2017, 12, S. 2322-2329 8 S.

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Epitaxially Grown Films of Standing and Lying Pentacene Molecules on Cu(110) Surfaces

Djuric, T., Ules, T., Flesch, H.-G., Plank, H., Shen, Q., Teichert, C., Resel, R. & Ramsey, M. G., 2011, in: Crystal growth & design. 11, S. 1015-1020

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Generalized Gaussian Error Functions and their Applications

Dirschmid, H. & Fischer, F. D., 2015, in: Acta mechanica. 226, S. 2887 2897 S.

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Combined Fe and Sr refining of Al-Si melt strategy for fabrication of hierarchical structure Si anodes

Ding, J., Sun, J., Ban, B., Jiang, X., Zhu, X., Mo, Z., Kratzer, M., Teichert, K. C. & Chen, J., 21 Apr. 2024, in: Chemical Engineering Journal. 489.2024, 1 June, 11 S., 151488.

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